1 |
Near-infrared detection in Si/InP core-
shell radial heterojunction nanowire arrays |
Pal, B., Sarkar, K. J., Das, S., and Banerji |
Journal of Alloys and compounds |
0925-8388 |
https://doi.org/10.1016/j.jallcom.2021.160943 |
6.2 |
2021 |
2 |
SnS2/Si
nanowire vertical heterostructure for high performance ultra-low power broadband
photodetector with excellent detectivity |
Das, S., Sarkar, K. J., Pal, B., Mondal, H., Pal, S., Basori, R., and Banerji, P. |
Journal of Applied Physics |
1089-7550 |
https://doi.org/10.1063/5.0047365 |
3.2 |
2021 |
3 |
Fabrication and studies on Si/InP core-shell
nanowire based solar cell using etched Si nanowire arrays |
Pal, B., Sarkar, K. J., and Banerji, P. |
Solar Energy Materials and Solar
Cells |
0927-0248 |
https://doi.org/10.1016/j.solmat.2019.110217 |
6.9 |
2020 |
4 |
Graphene oxide as a dielectric and charge trap
element in pentacene-based organic thin-film transistors for nonvolatile memory |
Sarkar, K. J., Pal, B., and Banerji, P. |
ACS Omega |
2470-1343 |
10.1021/acsomega.8b03301 |
4.1 |
2019 |
5 |
Graphene quantum dots as charge trap
elements for nonvolatile flash memory |
Sarkar, K. J., Sarkar, K., Pal, B., and Banerji, P. |
Journal of Physics and Chemistry of Solids |
0022-3697 |
https://doi.org/10.1016/j.jpcs.2018.06.013 |
4 |
2018 |
6 |
Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application, |
Sarkar, K. J., Pal, B., and Banerji, P. |
AIP
Conference Proceedings |
1551-7616 |
https://doi.org/10.1063/1.5028781 |
|
2018 |
7 |
Ambipolar
transport of silver nanoparticles decorated graphene oxide field effect transistors |
Sarkar, K. J., Sarkar, K., Pal, B., Kumar, A., Das, A., and Banerji, P. |
AIP
Conference Proceedings |
1551-7616 |
https://doi.org/10.1063/1.5032956 |
|
2018 |
8 |
Leakage current
characteristics in MOCVD grown InAs quantum dot embedded GaAs metal-
oxidesemiconductor capacitor |
Islam, S. M., Sarkar, K., Banerji, P., Sarkar, K. J., and Pal, B. |
RSC Advances |
2046-2069 |
https://doi.org/10.1039/C5RA15642D |
3.9 |
2015 |